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N-type Wafer

Introduction:

● Low oxygen and large thermal field process

● High-efficiency silicon wafers that meet customers' differentiated needs

● Ample production capacity reserves


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Product details

Material properties


Item



Specifications


Test Method


Growth method



Czochralski technique


--


Crystallinity


Monocrystalline

--


Conductive type


N-type

PN testing machine


Dimensions


M10:182.2*183.75 φ256mm

G12:210*210  φ295mm

G12-R:182.3*210  φ272mm


AOI


Thickness


M10:90-160µm

G12:90-160µm

G12R:90-160µm


AOI






Electrical properties


Item



Specifications


Test Method


Resistivity



0.6-1.6<Ω·cm>


AOI


Lifetime



≥800<µs>


BCT-400


Oxygen content



≤12<ppma>


FTIR (ASTM F121-83)


Carbon content



≤1<ppma>


FTIR (ASTM F123-91)







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